Investigation of High-K Gate Dielectrics and Chirality on the Performance of Nanoscale CNTFET
نویسندگان
چکیده
منابع مشابه
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چکیده ندارد.
High-K dielectrics for the gate stack
This article gives an overview of recent developments in the search for the next-generation dielectric for the complementary metal-oxide semiconductor gate stack. After introducing the main quantities of interest, the paper concentrates on a figure of merit that connects two main properties of the gate stack, namely, the leakage current and the capacitance. This is done for single layers as wel...
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ژورنال
عنوان ژورنال: Journal of Nano-and electronic Physics
سال: 2021
ISSN: ['2306-4277', '2077-6772']
DOI: https://doi.org/10.21272/jnep.13(2).02026